All-printed capacitors from graphene-BN-graphene nanosheet heterostructures
نویسندگان
چکیده
منابع مشابه
Graphene-BN Heterostructures: An In-Plane Transistor
Graphene-Boron Nitride (G-BN) heterostructures can lead to the realization of nanoscale electronics that will be smaller than the dimensional limit—14 nanometers—of silicon transistors and provide higher mobilities. However, the grapheneboron nitride heterostructure although self-insulating, cannot function as a transistor alone due to not having a second conducting pathway. Thus, the utilizati...
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We present a new force-field potential that describes the interlayer interactions in heterojunctions based on graphene and hexagonal boron nitride (h-BN). The potential consists of a long-range attractive term and a short-range anisotropic repulsive term. Its parameters are calibrated against reference binding and sliding energy profiles for a set of finite dimer systems and the periodic graphe...
متن کاملInter-Layer Potential for Graphene/h-BN Heterostructures Supplementary Information
As described in the main text the force-field parameterization has been performed using the tier-2 basis set, 1 as implemented in the FHI-AIMS suite of programs, 2 with tight convergence settings. This basis set is known to introduce minor basis set superposition errors (BSSE) in dimer calculations. 3, 4 In order to estimate the BSSE in the present case, we have performed counterpoise (CP) 5, 6...
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We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening....
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Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in-plane graphene growth from the step-edge of hexagonal BN (h-BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4958858